152 citations · 237 across the 25 of their papers we have counts for
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Digital Etching of Single-Crystalline Silicon Fin Barriers Down to Sub-10 nm
Yu Wu, Teun A. J. van Schijndel, Anthony P. McFadden +3
This work presents a fabrication process to realize sub-10 nm-thick, high-aspect-ratio Si fins using high-resistivity float-zone single-crystal Si wafers. Following anisotropic wet…
Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry
Jaden R. Love, Carlos A. Armenta, Atlantis K. Moses +5
Gray tin (α-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve eith…
Combining Quasiparticle Self-Consistent and Machine-Learned DFT+ to Assess Half-Metallicity in Co- and Ni-Based Heuslers
Zefeng Cai, Malcolm J. A. Jardine, Maituo Yu +6
Half-metallic Heusler compounds are of significant interest for spintronics. For device fabrication, compounds that can be epitaxially grown on III-V semiconductors are particularl…
Altermagnetic band splitting in 10 nm epitaxial CrSb thin films
Sandra Santhosh, Paul Corbae, Wilson J. Yanez-Parreno +14
Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symme…
Sn-InAs nanowire shadow-defined Josephson junctions
Amritesh Sharma, An-Hsi Chen, Connor P. Dempsey +6
Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with…
Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate
Shinichi Nishihaya, Malcolm J. A. Jardine, Hadass S. Inbar +9
The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various sp…
Hybridization gap approaching the two-dimensional limit of topological insulator BiSb
Paul Corbae, Aaron N. Engel, Jason T. Dong +5
Bismuth antimony alloys (BiSb) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk…
First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi(111)/Si(111) interfaces
J. K. Nangoi, C. J. Palmstrøm, C. G. Van de Walle
We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(1…
Determining the bulk and surface electronic structure of -Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy
Aaron N. Engel, Paul J. Corbae, Hadass S. Inbar +9
The surface and bulk states in topological materials have shown promise in many applications. Grey or -Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of the…
Strain Solitons in an Epitaxially Strained van der Waals-like Material
Jason T. Dong, Hadass S. Inbar, Connor P. Dempsey +2
Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual e…
Growth and characterization of -Sn thin films on In- and Sb-rich reconstructions of InSb(001)
Aaron N. Engel, Connor P. Dempsey, Hadass S. Inbar +7
-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applicati…
Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates
A. -H. Chen, C. P. Dempsey, M. Pendharkar +8
Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a…
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
Shouvik Chatterjee, Felipe Crasto de Lima, John A. Logan +18
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topolo…