Growth and fabrication of advanced PbTe-Pb quantum devices

Abstract

We report recent progress in the growth and fabrication of advanced PbTe-Pb Majorana devices for three-terminal correlation experiments. A critical prerequisite for these devices is a continuous Pb film spanning from the PbTe nanowire to the substrate. In previous studies, PbTe nanowires were spatially separated from the substrate mask, making them unable to fulfill this requirement. To address this issue, we have developed a new growth and fabrication approach. Key fabrication steps are introduced between the PbTe growth and Pb deposition. The top facet of the PbTe nanowire is covered with a Te capping layer before breaking the ultra-high vacuum, enabling ex situ processing for subsequent steps. The mask is then removed, followed by the fabrication of shadow walls. After reloading the chip into the growth chamber, the Te protection layer is removed through thermal decomposition, and the Pb film is subsequently deposited. Notably, a pristine PbTe-Pb interface with an in-situ-equivalent quality can be achieved despite the ex-situ processing. Our technique facilitates the develop of advanced PbTe-Pb quantum devices with complex designs, paving the way toward the realization of topological qubits.

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