On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Abstract

The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al${}_{1-x}$Ga${}_x$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm${}^2$/Vs was achieved at a sample temperature of 2 K.

arXiv comment23 pages, 7 figures, 1 table

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Cited by in corpus (11)

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• Transport studies of epi-Al/InAs 2DEG systems for required building-blocks in topological superconductor networks
• Scattering mechanisms of highest-mobility InAs/Al${}_x$Ga${}_{1-x}$Sb quantum wells
• High mobility InAs 2DEGs on GaSb substrates: a platform for mesoscopic quantum transport
• Mobility in excess of $10^6$ cm${}^2$/Vs in InAs quantum wells grown on lattice mismatched InP substrates
• Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)
• Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures
• Controlling Fermi level pinning in near-surface InAs quantum wells
• High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
• Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
• Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas