Gate depletion of an InSb two-dimensional electron gas

Abstract

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).

12 pages, 3 figures

References in corpus (4)

• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device
• Fast spin-orbit qubit in an indium antimonide nanowire
• Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

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• Stable quantum dots in an InSb two-dimensional electron gas
• A double quantum dot defined by top gates in a single crystalline InSb nanosheet
• Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
• Pump-probe nuclear spin relaxation study of the quantum Hall ferromagnet at filling factor nu = 2
• High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells