Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

Abstract

We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5x1014 m-2V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrodinger-Poisson simulation and two-carrier model.

11 pages,3 figures

References in corpus (5)

• High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures
• Nonlinear magnetic field dependence of spin polarization in high density two-dimensional electron systems
• Dynamic Nuclear Polarization and Nuclear Magnetic Resonance in the Simplest Pseudospin Quantum Hall Ferromagnet
• Room temperature ballistic transport in InSb quantum well nanodevices
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Cited by in corpus (7)

• Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
• Quantum transport in high-quality shallow InSb quantum wells
• Gate depletion of an InSb two-dimensional electron gas
• A double quantum dot defined by top gates in a single crystalline InSb nanosheet
• Role of chiral quantum Hall edge states in nuclear spin polarization
• Pump-probe nuclear spin relaxation study of the quantum Hall ferromagnet at filling factor nu = 2
• In-Plane Magnetoconductance Mapping of InSb Quantum Wells