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K. F. Yang

2 papers hereh-index 692 citations21 works total

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author position
  • first author1
  • middle author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2

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most citedCharacterization of InSb quantum wells with atomic layer deposited gate dielectrics

15 citations · 15 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2019

Pump-probe nuclear spin relaxation study of the quantum Hall ferromagnet at filling factor nu = 2

K. F. Yang, M. M. Uddin, K. Nagase +5

The nuclear spin-lattice relaxation time T1 of the nu = 2 quantum Hall ferromagnet (QHF) formed in a gate-controlled InSb two-dimensional electron gas has been characterized using…

cond-mat.mes-hall2012★ 15 cited

Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

M. M. Uddin, H. W. Liu, K. F. Yang +4

We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance…

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