Room temperature ballistic transport in InSb quantum well nanodevices

Abstract

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10${}^6$ A/cm${}^2$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.

References in corpus (1)

• Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Cited by in corpus (4)

• Intraband electron focusing in bilayer graphene
• Characterization of InSb quantum wells with atomic layer deposited gate dielectrics
• Cyclotron-resonance-assisted photon drag effect in InSb/InAlSb quantum wells excited by terahertz radiation
• Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet