38 citations · 87 across the 10 of their papers we have counts for
10 papers
Non-equilibrium hot-carrier transport in type-II multiple-quantum wells for solar-cell applications
H. P. Piyathilaka, R. Sooriyagoda, V. R. Whiteside +4
Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcit…
In-Plane Magnetoconductance Mapping of InSb Quantum Wells
J. T. Mlack, K. S. Wickramasinghe, T. D. Mishima +2
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map whi…
Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications
R. Islam, M. M. Uddin, M. Mofazzal Hossain +3
The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantu…
Gate depletion of an InSb two-dimensional electron gas
M. M. Uddin, H. W. Liu, K. F. Yang +6
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surfac…
Characterization of InSb quantum wells with atomic layer deposited gate dielectrics
M. M. Uddin, H. W. Liu, K. F. Yang +4
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance…
Quantum coherent negative bend resistance in InSb mesoscopic structures
N. Goel, T. Jayasekera, K. Mullen +4
Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, wh…