71 citations · 398 across the 20 of their papers we have counts for
21 papers
Response to recent comments on Phys. Rev. B 107, 245423 (2023) and Subsection S4.3 of the Supp. Info. for Nature 638, 651-655 (2025)
Morteza Aghaee, Zulfi Alam, Mariusz Andrzejczuk +127
The topological gap protocol (TGP) is a statistical test designed to identify a topological phase with high confidence and without human bias. It is used to determine a promising p…
Roadmap to fault tolerant quantum computation using topological qubit arrays
David Aasen, Morteza Aghaee, Zulfi Alam +179
We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap e…
Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Morteza Aghaee, Alejandro Alcaraz Ramirez, Zulfi Alam +159
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operati…
Closing of the Induced Gap in a Hybrid Superconductor-Semiconductor Nanowire
D. Puglia, E. A. Martinez, G. C. Ménard +8
Hybrid superconductor-semiconductor nanowires are predicted to undergo a field-induced phase transition from a trivial to a topological superconductor, marked by the closure and re…
Anomalous Nematic States in High Half-Filled Landau Levels
X. Fu, Q. Shi, M. A. Zudov +6
It is well established that the ground states of a two-dimensional electron gas with half-filled high () Landau levels are compressible charge-ordered states, known as qua…
Hydrodynamic and ballistic transport over large length scales in GaAs/AlGaAs
Adbhut Gupta, J. J. Heremans, Gitansh Kataria +4
We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility…
A Cryogenic Interface for Controlling Many Qubits
S. J. Pauka, K. Das, R. Kalra +9
A scaled-up quantum computer will require a highly efficient control interface that autonomously manipulates and reads out large numbers of qubits, which for solid-state implementa…
Characterising Quantum Devices at Scale with Custom Cryo-CMOS
S. J. Pauka, K. Das, J. M. Hornibrook +4
We make use of a custom-designed cryo-CMOS multiplexer (MUX) to enable multiple quantum devices to be characterized in a single cool-down of a dilution refrigerator. Combined with…
Impact of silicon doping on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures
S. Fallahi, J. R. Nakamura, G. C. Gardner +2
We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do…
A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices
T. Hensgens, U. Mukhopadhyay, P. Barthelemy +6
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge…
Mobility in excess of cm/Vs in InAs quantum wells grown on lattice mismatched InP substrates
A. T. Hatke, T. Wang, 2 C. Thomas +2
InAs-based two-dimensional electron systems grown on lattice mismatched InP substrates offer a robust platform for the pursuit of topologically protected quantum computing. We inve…
Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment
X. G. Croot, S. J. Pauka, H. Lu +6
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shift…
Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to and Impact of Density Fluctuations
Qi Qian, James R. Nakamura, Saeed Fallahi +6
We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses l…
High temperature resistivity measured at ν = 5/2 as a predictor of 2DEG quality in the N=1 Landau level
Qi Qian, James R. Nakamura, Saeed Fallahi +3
We report a high temperature (T = 0.3K) indicator of the excitation gap at the filling factor fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two…
Apparent temperature-induced reorientation of quantum Hall stripes
Q. Shi, M. A. Zudov, B. Friess +4
Our magnetotransport measurements of quantum Hall stripes in a high-quality GaAs quantum well in a slightly tilted magnetic field reveal that the orientation of stripes can be chan…
Shubnikov-de Haas oscillations in two-dimensional electron gas under subterahertz radiation
Q. Shi, P. D. Martin, A. T. Hatke +6
We report on magnetotransport measurements in a two-dimensional (2D) electron gas subject to subterahertz radiation in the regime where Shubnikov-de Haas oscillations (SdHO) and mi…
Gapped Excitations of unconventional FQHE states in the Second Landau Level
U. Wurstbauer, A. L. Levy, A. Pinczuk +5
We report the observation of low-lying collective charge and spin excitations in the second Landau level at ν = 2 + 1/3 and also for the very fragile states at ν = 2 + 2/5, 2 + 3/8…
Low-temperature illumination and annealing of ultra-high quality quantum wells
Mohammad Samani, Alexander V. Rossokhaty, Ebrahim Sajadi +5
The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below…
The Fractional Quantum Hall State in the Presence of Alloy Disorder
Nianpei Deng, G. C. Gardner, S. Mondal +3
We report quantitative measurements of the impact of alloy disorder on the fractional quantum Hall state. Alloy disorder is controlled by the aluminum content in the Al…
Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in GaAs/AlGaAs Quantum Wells
J. D. Watson, S. Mondal, G. Gardner +2
We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 n…
Quantitative Analysis of the Disorder Broadening and the Intrinsic Gap for the Fractional Quantum Hall State
N. Samkharadze, J. D. Watson, G. Gardner +4
We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the s…