activity
20112025
most citedHydrodynamic and ballistic transport over large length scales in GaAs/AlGaAs

71 citations · 398 across the 20 of their papers we have counts for

collaborators
Showing 2017Show all

7 papers · 1 filter

cond-mat.mes-hall2017★ 5 cited

Impact of silicon doping on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures

S. Fallahi, J. R. Nakamura, G. C. Gardner +2

We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do…

cond-mat.mes-hall2017★ 2 cited

A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

T. Hensgens, U. Mukhopadhyay, P. Barthelemy +6

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge…

cond-mat.mtrl-sci2017★ 37 cited

Mobility in excess of cm/Vs in InAs quantum wells grown on lattice mismatched InP substrates

A. T. Hatke, T. Wang, 2 C. Thomas +2

InAs-based two-dimensional electron systems grown on lattice mismatched InP substrates offer a robust platform for the pursuit of topologically protected quantum computing. We inve…

cond-mat.mes-hall2017★ 9 cited

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

X. G. Croot, S. J. Pauka, H. Lu +6

We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shift…

cond-mat.mes-hall2017★ 33 cited

Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to and Impact of Density Fluctuations

Qi Qian, James R. Nakamura, Saeed Fallahi +6

We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses l…

cond-mat.mes-hall2017★ 7 cited

High temperature resistivity measured at ν = 5/2 as a predictor of 2DEG quality in the N=1 Landau level

Qi Qian, James R. Nakamura, Saeed Fallahi +3

We report a high temperature (T = 0.3K) indicator of the excitation gap at the filling factor fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two…

cond-mat.mes-hall2017★ 7 cited

Apparent temperature-induced reorientation of quantum Hall stripes

Q. Shi, M. A. Zudov, B. Friess +4

Our magnetotransport measurements of quantum Hall stripes in a high-quality GaAs quantum well in a slightly tilted magnetic field reveal that the orientation of stripes can be chan…