Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs

Abstract

We report ultra-wide bandgap (UWBG) AlGaN heterostructure field-effect transistors (HFETs) exhibiting a high breakdown field (> 5.3 MV/cm) and a low contact resistance (~1.55 Ωmm), tailored for high-power radiofrequency applications. A split-doped barrier architecture, employing two distinct doping concentrations, is shown to enhance both the breakdown field and contact resistance. This design enables a state-of-the-art combination of maximum drain current (487 mA/mm) and breakdown field, along with a high cutoff frequency of 7.2 GHz. These results demonstrate a viable pathway to push device performance toward the material limits while minimizing contact resistance in UWBG AlGaN HFETs, paving the way for next-generation high-power, high-frequency applications.

11 pages, 10 figures

References in corpus (3)

• AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts
• Transport in two-dimensional modulation doped semiconductor structures
• High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors

Cited by in corpus (1)

• Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices