4 papers
Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz
Yinxuan Zhu, Andrew A. Allerman, Ashley Wissel-Garcia +8
We report the design and demonstration of ultra-wide-bandgap (UWBG) AlGaN polarization-graded field-effect transistors (PolFETs) that achieve a current-gain cutoff frequency above…
Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs
Seungheon Shin, Can Cao, Jon Pratt +5
We report ultra-wide bandgap (UWBG) AlGaN heterostructure field-effect transistors (HFETs) exhibiting a high breakdown field (> 5.3 MV/cm) and a low contact resistance (~1.55 Ωmm),…
High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Seungheon Shin, Hridibrata Pal, Jon Pratt +8
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency…
Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi +7
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record l…