13 citations · 24 across the 8 of their papers we have counts for
9 papers
Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage
Jonathan Pratt, Yizheng Liu, Ijaas Mohamed +8
We demonstrate UWBG AlGaN polarization-graded field-effect transistors (PolFETs) incorporating room-temperature sputtered p-type oxide Cr2O3 as a P-N heterojunction gate, enabling…
Vertical Gallium Oxide Isolated Source Electrode Field Effect Transistors (ISEFET) Without Planarization or Mid-Gap Acceptor Blocking Layers
Akilesh Srikanth, Md Saklain Morshed, Chandan Joishi +2
We propose and demonstrate the first vertical Gallium oxide device architecture without the use of planarization etch back processes or mid-gap acceptor regions. The Isolated Sourc…
Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs
Seungheon Shin, Can Cao, Jon Pratt +5
We report ultra-wide bandgap (UWBG) AlGaN heterostructure field-effect transistors (HFETs) exhibiting a high breakdown field (> 5.3 MV/cm) and a low contact resistance (~1.55 Ωmm),…
High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Seungheon Shin, Hridibrata Pal, Jon Pratt +8
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency…
Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
Seungheon Shin, Kyle Liddy, Yinxuan Zhu +5
We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are impo…
Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi +7
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record l…
Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm Current Density
Zhanbo Xia, Chandan Joishi, Shahadat H. Sohel +4
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design…
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi +4
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performan…
Design and Simulation of a III-Nitride Light Emitting Transistor
Mohammad Awwad, Sheikh Ifatur Rahman, Chandan Joishi +2
This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping…