13 citations · 24 across the 8 of their papers we have counts for
5 papers · 1 filter
Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage
Jonathan Pratt, Yizheng Liu, Ijaas Mohamed +8
We demonstrate UWBG AlGaN polarization-graded field-effect transistors (PolFETs) incorporating room-temperature sputtered p-type oxide Cr2O3 as a P-N heterojunction gate, enabling…
Vertical Gallium Oxide Isolated Source Electrode Field Effect Transistors (ISEFET) Without Planarization or Mid-Gap Acceptor Blocking Layers
Akilesh Srikanth, Md Saklain Morshed, Chandan Joishi +2
We propose and demonstrate the first vertical Gallium oxide device architecture without the use of planarization etch back processes or mid-gap acceptor regions. The Isolated Sourc…
Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm Current Density
Zhanbo Xia, Chandan Joishi, Shahadat H. Sohel +4
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design…
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi +4
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performan…
Design and Simulation of a III-Nitride Light Emitting Transistor
Mohammad Awwad, Sheikh Ifatur Rahman, Chandan Joishi +2
This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping…