3 papers
physics.app-ph2025
Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs
Xuefeng Li, Nick Pant, Sheikh Ifatur Rahman +4
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms…
physics.app-ph2024
Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes
Manisha Muduli, Yongkang Xia, Seunghyun Lee +6
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on…
physics.app-ph2023
Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
Chandan Joishi, Sheikh Ifatur Rahman, Zhanbo Xia +2
We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The…