3 papers
physics.app-ph2025
Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
Yinxuan Zhu, Ashley Wissel-Garcia, Kidus Guye +12
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and…
physics.app-ph2025
Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz
Yinxuan Zhu, Andrew A. Allerman, Ashley Wissel-Garcia +8
We report the design and demonstration of ultra-wide-bandgap (UWBG) AlGaN polarization-graded field-effect transistors (PolFETs) that achieve a current-gain cutoff frequency above…
cond-mat.mtrl-sci2025
Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs
Seungheon Shin, Can Cao, Jon Pratt +5
We report ultra-wide bandgap (UWBG) AlGaN heterostructure field-effect transistors (HFETs) exhibiting a high breakdown field (> 5.3 MV/cm) and a low contact resistance (~1.55 Ωmm),…