Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs

Seungheon Shin, Can Cao, Jon Pratt +5

We report ultra-wide bandgap (UWBG) AlGaN heterostructure field-effect transistors (HFETs) exhibiting a high breakdown field (> 5.3 MV/cm) and a low contact resistance (~1.55 Ωmm),…