Localization and interaction of interlayer excitons in MoSe/WSe heterobilayers
arXiv:2307.03842 · doi:10.1038/s41467-023-42710-8
Abstract
Transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform to explore unique excitonic physics via properties of the constituent TMDs and external stimuli. Interlayer excitons (IXs) can form in TMD heterobilayers as delocalized or localized states. However, the localization of IX in different types of potential traps, the emergence of biexcitons in the high-excitation regime, and the impact of potential traps on biexciton formation have remained elusive. In our work, we observe two types of potential traps in a MoSe/WSe heterobilayer, which result in significantly different emission behavior of IXs at different temperatures. We identify the origin of these traps as localized defect states and the moir{é} potential of the TMD heterobilayer. Furthermore, with strong excitation intensity, a superlinear emission behavior indicates the emergence of interlayer biexcitons, whose formation peaks at a specific temperature. Our work elucidates the different excitation and temperature regimes required for the formation of both localized and delocalized IX and biexcitons, and, thus, contributes to a better understanding and application of the rich exciton physics in TMD heterostructures.
arXiv comment18 pages, 15 figures incl supplemental material
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Cited by in corpus (6)
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- Review: Advanced characterization of the spatial variation of moiré heterostructures and moiré excitons
- Hierarchical Disorder in Moiré Exciton Photoluminescence Probed by Spectral-Descriptor Correlations
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- Robust Interlayer Exciton Interplay in Twisted van der Waals Heterotrilayer on a Broadband Bragg Reflector up to Room Temperature
- The fate of disorder in twisted bilayer graphene near the magic angle