Nanoscale trapping of interlayer excitons in a 2D semiconductor heterostructure

Abstract

For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trapping approaches involving moiré superlattices and nanopillars do not meet the quantum technology requirements of deterministic placement and energy tunability. Here, we use a nanopatterned graphene gate to create a sharply varying electric field in close proximity to a MoSe2-WSe2 heterostructure. The dipole interaction between the IX and the electric field creates an ~20 nm trap. The trapped IXs show the predicted electric field dependent energy, saturation at low excitation power, and increased lifetime, all signatures of strong spatial confinement. The demonstrated architecture is a crucial step towards deterministic trapping of single IXs, which has broad applications to scalable quantum technologies.

References in corpus (23)

• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• Moiré Excitons in Van der Waals Heterostructures
• Signatures of moiré-trapped valley excitons in MoSe${}_2$/WSe${}_2$ heterobilayers
• Observation of Intense Second Harmonic Generation from MoS${}_2$ Atomic Crystals
• Second harmonic microscopy of monolayer MoS2
• Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices
• Electrical control of interlayer exciton dynamics in atomically thin heterostructures
• Long-lived direct and indirect interlayer excitons in van der Waals heterostructures
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
• Valley excitons in two-dimensional semiconductors
• Theory of optical absorption by interlayer excitons in transition metal dichalcogenide heterobilayers
• Dipolar interactions between field-tuneable, localized emitters in van der Waals heterostructures
• Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe${}_2$: Landau level degeneracy, effective mass, and negative compressibility
• Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures
• Large effective mass and interaction-enhanced Zeeman splitting of $K$-valley electrons in MoSe${}_2$
• Discrete Interactions between a few Interlayer Excitons Trapped at a MoSe${}_2$-WSe${}_2$ Heterointerface
• Highly Valley-Polarized Singlet and Triplet Interlayer Excitons in van der Waals Heterostructure
• A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
• Interlayer excitons in transition metal dichalcogenide heterostructures
• Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening
• Condensation signatures of photogenerated interlayer excitons in a van der Waals heterostack
• Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures

Cited by in corpus (14)

• Interlayer Exciton Diode and Transistor
• Lasing of Moiré Trapped MoSe${}_2$/WSe${}_2$ Interlayer Excitons Coupled to a Nanocavity
• Extended spatial coherence of interlayer excitons in MoSe${}_2$/WSe${}_2$ heterobilayers
• Signatures of electric field and layer separation effects on the spin-valley physics of MoSe${}_2$/WSe${}_2$ heterobilayers: from energy bands to dipolar excitons
• Lattice reconstruction in MoSe${}_2$-WSe${}_2$ heterobilayers synthesized by chemical vapor deposition
• Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures
• Trapping Interlayer Excitons in van der Waals Heterostructures by Potential Arrays
• Semiconductor membranes for electrostatic exciton trapping in optically addressable quantum transport devices
• Single exciton trapping in an electrostatically defined 2D semiconductor quantum dot
• Dipolar interactions enhanced by two-dimensional dielectric screening in few-layer van der Waals structures
• Crystallizing electrons with artificially patterned lattices
• Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
• Exciton-Anyon Binding in Fractional Chern Insulators: Spectral Fingerprints
• Trimer superfluidity of antiparallel dipolar excitons in a bilayer heterostructure