Interlayer excitons in transition metal dichalcogenide heterostructures

Abstract

Starting from the single-particle Dirac Hamiltonian for charge carriers in monolayer transition metal dichalcogenides (TMDs), we construct a four-band Hamiltonian describing interlayer excitons consisting of an electron in one TMD layer and a hole in the other TMD layer. An expression for the electron-hole interaction potential is derived, taking into account the effect of the dielectric environment above, below, and between the two TMD layers as well as polarization effects in the transition metal layer and in the chalcogen layers of the TMD layers. We calculate the interlayer exciton binding energy and average in-plane interparticle distance for different TMD heterostructures. The effect of different dielectric environments on the exciton binding energy is investigated and a remarkable dependence on the dielectric constant of the barrier between the two layers is found, resulting from competing effects as a function of the in-plane and out-of-plane dielectric constants of the barrier. The polarization effects in the chalcogen layers, which in general reduce the exciton binding energy, can lead to an increase in binding energy in the presence of strong substrate effects by screening the substrate. The excitonic absorbance spectrum is calculated and we show that the interlayer exciton peak depends linearly on a perpendicular electric field, which agrees with recent experimental results.

11 pages, 7 figures, 5 tables

References in corpus (13)

• Valley polarization in MoS2 monolayers by optical pumping
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• Tightly bound excitons in monolayer WSe2
• Determination of band alignment in the single layer MoS2/WSe2 heterojunction
• High-temperature superfluidity with indirect excitons in van der Waals heterostructures
• Robust optical emission polarization in MoS2 monolayers through selective valley excitation
• Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure
• Inter- and intra-layer excitons in MoS${}_2$/WS${}_2$ and MoSe${}_2$/WSe${}_2$ heterobilayers
• Cooper pairing of electrons and holes in graphene bilayer: Correlation effects
• Excitons and trions in monolayer transition metal dichalcogenides: A comparative study between the multiband model and the quadratic single-band model
• Enhancement of electron-hole superfluidity in double few-layer graphene
• Electrostatics of electron-hole interactions in van der Waals heterostructures

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• Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
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• Understanding the Effects of Dielectric Property, Separation Distance, and Band Alignment on Interlayer Excitons in 2D Hybrid MoS2/WSe2 Heterostructures
• Magnetoexcitons and Massive Dirac Fermions in Monolayers of Transition Metal Dichalcogenides in a High Magnetic Field
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