Interlayer exciton-polaron in atomically thin semiconductors

Abstract

A novel type of exciton-phonon bound state -- interlayer polaron -- in a double-layer two-dimensional semiconductor with transition metal dichalcogenides as an example, is predicted. In these systems the interaction of the interlayer exciton with the soft modes of out-of-plane lattice vibrations caused by van der Waals forces and flexural rigidity gives rise to a bound quasiparticle. The energy and effective mass of the formed polaron for weak and strong exciton-phonon coupling regimes are calculated and analyzed. Possible manifestations of these effects in transport- and spectroscopy-related experiments are discussed.

minor corrections, published version

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Cited by in corpus (6)

• Excitons in mesoscopically reconstructed moiré heterostructures
• Optical properties of exciton in two-dimensional transition metal dichalcogenide nanobubbles
• Phonon signatures in spectra of exciton polaritons in transition metal dichalcogenides
• Phonon-induced exciton weak localization in two-dimensional semiconductors
• Flexural deformations and collapse of bilayer two-dimensional crystals by interlayer exciton
• Boltzmann transport theory of magnon-exciton drag