Interlayer exciton-polaron in atomically thin semiconductors
arXiv:2009.02793 · doi:10.1002/andp.202000339
Abstract
A novel type of exciton-phonon bound state -- interlayer polaron -- in a double-layer two-dimensional semiconductor with transition metal dichalcogenides as an example, is predicted. In these systems the interaction of the interlayer exciton with the soft modes of out-of-plane lattice vibrations caused by van der Waals forces and flexural rigidity gives rise to a bound quasiparticle. The energy and effective mass of the formed polaron for weak and strong exciton-phonon coupling regimes are calculated and analyzed. Possible manifestations of these effects in transport- and spectroscopy-related experiments are discussed.
minor corrections, published version
References in corpus (14)
- Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
- Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
- Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
- Theory of optical absorption by interlayer excitons in transition metal dichalcogenide heterobilayers
- Vacuum Polarization and Screening of Supercritical Impurities in Graphene
- Atomic Collapse and Quasi-Rydberg States in Graphene
- Observation of interlayer phonon modes in van der Waals heterostructures
- Valley Phonons and Exciton Complexes in a Monolayer Semiconductor
- Phonon Sidebands in Transition Metal Dichalcogenides
- High quality-factor mechanical resonators based on WSe2 monolayers
- Graphene as a Prototype Crystalline Membrane
- Optomechanical measurement of thermal transport in two-dimensional MoSe2 lattices
- Fröhlich Polarons from 0D to 3D: Concepts and Recent Developments
- Intervalley Polaron in Atomically Thin Transition Metal Dichalcogenides