Electrostatics of electron-hole interactions in van der Waals heterostructures

Abstract

The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poissons equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.

10 pages, 8 figures

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Cited by in corpus (14)

• Interlayer excitons in transition metal dichalcogenide heterostructures
• Dependence of the hBN Layer Thickness on the Band Structure and Exciton Properties of Encapsulated WSe2 Monolayers
• Boosting quantum yields in 2D semiconductors via proximal metal plates
• Stark shift of excitons and trions in two-dimensional materials
• Electrical control of inter-layer excitons in van der Waals heterostructures
• Theoretical methods for excitonic physics in two-dimensional materials
• Anomalous Stark Shift of Excitonic Complexes in Monolayer Semiconductor
• Optical Properties of Anisotropic Excitons in Phosphorene
• A colloquium on the variational method applied to excitons in 2D materials
• Signatures of sub-band excitons in few-layer black phosphorus
• Simulations of Trions and Biexcitons in Layered Hybrid Organic-Inorganic Lead Halide Perovskites
• Microscopic model of the doping dependence of line widths in monolayer transition metal dichalcogenides
• Anisotropic Keldysh interaction
• Striped excitonic (super)solid in anisotropic semiconductors with screened exciton interactions