Electrical control of inter-layer excitons in van der Waals heterostructures
arXiv:1709.08315 · doi:10.1103/PhysRevB.98.121302
Abstract
We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe/WSe van der Waals heterostructures. Band structures are obtained with density functional theory calculations, along with the electron and hole wave functions in conduction and valence bands, respectively. Although the type-II nature of the heterostructure leads to fully charge separated inter-layer excitons, charge carriers distribution among the layers is shown to be easily tunable by external field. Our results show that moderate values of electric field produce more evenly distributed wave functions along the heterostructure, thus enhancing both the inter-layer exciton binding energy and, most notably, its oscillator strength.
arXiv comment5 pages, 4 figures
References in corpus (30)
- Atomically thin MoS2: A new direct-gap semiconductor
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Polaritons in layered 2D materials
- Tightly bound excitons in monolayer WSe2
- Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
- Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
- Probing Excitonic Dark States in Single-layer Tungsten Disulfide
- Theory of Neutral and Charged Excitons in Monolayer Transition Metal Dichalcogenides
- Exciton Binding Energy of Monolayer WS2
- Non-linear Optical Spectroscopy of Excited Exciton States for Efficient Valley Coherence Generation in WSe2 Monolayers
- Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching
- Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
- Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
- Long-lived direct and indirect interlayer excitons in van der Waals heterostructures
- Theory of optical absorption by interlayer excitons in transition metal dichalcogenide heterobilayers
- Excitons in van der Waals heterostructures: The important role of dielectric screening
- Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures
- Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers
- The dielectric genome of van der Waals heterostructures
- Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure
- Intervalley biexcitons and many-body effects in monolayer MoS2
- Low-energy Electron Reflectivity from Graphene
- Electrostatics of electron-hole interactions in van der Waals heterostructures
- Electric Field Tuning of Band Offsets in Transition Metal Dichalcogenides
- Exciton spectra in vertical stacks of triple and quadruple quantum dots in an electric field
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- Flattening conduction and valence bands for interlayer excitons in a moiré MoS/WSe heterobilayer