Stark shift of excitons and trions in two-dimensional materials

Abstract

The effect of an external in-plane electric field on neutral and charged exciton states in two-dimensional (2D) materials is theoretically investigated. These states are argued to be strongly bound, so that electron-hole dissociation is not observed up to high electric field intensities. Trions in the anisotropic case of monolayer phosphorene are demonstrated to especially robust under electric fields, so that fields as high as 100 kV/cm yield no significant effect on the trion binding energy or probability density distribution. Polarizabilities of excitons are obtained from the parabolicity of numerically calculated Stark shifts. For trions, a fourth order Stark shift is observed, which enables the experimental verification of hyperpolarizability in 2D materials, as observed in the highly excited states of the Rydberg series of atoms and ions.

arXiv comment7 pages, 4 figures, 3 tables

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Cited by in corpus (16)

• Electron-exciton interactions in the exciton-polaron problem
• Gate-tunable emission of exciton-plasmon polaritons in hybrid MoS2-gap-mode metasurfaces
• Field-induced dissociation of two-dimensional excitons in transition-metal dichalcogenides
• Spectral measurement of the breakdown limit of $\beta -G{a}_2{O}_3$ and tunnel ionization of self-trapped excitons and holes
• Excitons in Phosphorene: A Semi-Analytical Perturbative Approach
• Anisotropic Stark shift, field-induced dissociation, and electroabsorption of excitons in phosphorene
• Confined Trions and Mott-Wigner States in a Purely Electrostatic Moiré Potential
• Tunable properties of excitons in double monolayer semiconductor heterostructures
• Trion clustering structure and binding energy in 2D semiconductor materials: Faddeev equations approach
• Excitons in twisted AA' hexagonal boron nitride bilayers
• Analytical Quantitative Semi-Classical Approach to the LoSurdo-Stark Effect and Ionization in 2D excitons
• Tunable effective masses of magneto-excitons in two-dimensional materials
• Efficient ionization of two dimensional excitons by intense single cycle terahertz pulses
• Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy
• Exciton localization on p-i-n junctions in two-dimensional crystals
• Three-boson stability for boosted interactions towards the zero-range limit