Excitons in twisted AA' hexagonal boron nitride bilayers

Abstract

The twisted hexagonal boron nitride (hBN) bilayer has demonstrated exceptional properties, particularly the existence of electronic flat bands without needing a magic angle, suggesting strong excitonic effects. Therefore, a systematic approach is presented to study the excitonic properties of twisted AA' hBN using the Bethe-Salpeter equation based on single-particle tight-binding wave functions. These are provided by a one-particle Hamiltonian that is parameterized to describe the main features of {\it ab initio} calculations. The Bethe-Salpeter equation is then solved in the so-called excitonic transition representation, which significantly reduces the problem dimensionality by exploiting the system's symmetries. Consequently, the excitonic energies and the excitonic wave functions are obtained from the direct diagonalization of the effective two-particle Hamiltonian of the Bethe-Salpeter equation. We have studied rotation angles as low as $7.34^{\circ }$. The model allows the study of commensurate and incommensurate moiré patterns at much lower computational cost than the {\it ab initio} version of the Bethe-Salpeter equation. Here, using the model and effective screening of the Keldysh type, we could obtain the absorption spectra and characterize the excitonic properties of twisted hBN bilayers for different rotation angles, demonstrating how this property affects the excitonic energies and localizations of their wavefunctions.

arXiv comment32 pages, 16 figures

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Cited by in corpus (5)

• Emergence of flat bands in the quasicrystal limit of boron nitride twisted bilayers
• Twisting in h-BN bilayers and their angle-dependent properties
• Tunable exciton polaritons in band-gap engineered hexagonal boron nitride
• Insulating moiré homobilayers lack a threefold symmetric second harmonic generation
• Moiré spintronics: Emergent phenomena, material realization and machine learning accelerating discovery