Dipolar interactions enhanced by two-dimensional dielectric screening in few-layer van der Waals structures

Abstract

We theoretically examined how the dielectric screening of two-dimensional layered materials affects the dipolar interaction between interlayer excitons in few-layer van der Waals structures. Our analysis indicates that the dipolar interaction is largely enhanced by two-dimensional dielectric screening at an inter-exciton separation of several nanometers or larger. The underlying mechanism can be attributed to the induced-charge densities in layered materials, which give rise to induced-dipole densities at large distances with directions parallel to that of the interlayer exciton. The interaction between quadrupolar excitons in trilayer structures are found to be enhanced even larger, with a magnitude one to two orders stronger than that without 2D dielectric screening. The strengths of these dipolar and quadrupolar interactions can be further tuned by engineering the dielectric environment.

References in corpus (28)

• Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• The physics of dipolar bosonic quantum gases
• Signatures of moiré-trapped valley excitons in MoSe${}_2$/WSe${}_2$ heterobilayers
• Probing Excitonic Dark States in Single-layer Tungsten Disulfide
• Theory of Neutral and Charged Excitons in Monolayer Transition Metal Dichalcogenides
• Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
• Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane
• Electrical control of interlayer exciton dynamics in atomically thin heterostructures
• Binding energies of exciton complexes in transition metal dichalcogenides and effect of dielectric environment
• Orbital diamagnetism in multilayer graphenes: Systematic study with the effective mass approximation
• Dipolar interactions between field-tuneable, localized emitters in van der Waals heterostructures
• Brightened spin-triplet interlayer excitons and optical selection rules in van der Waals heterobilayers
• Spin-layer locking of interlayer excitons trapped in moiré potentials
• Correlated insulator of excitons in WSe2/WS2 moiré superlattices
• Discrete Interactions between a few Interlayer Excitons Trapped at a MoSe${}_2$-WSe${}_2$ Heterointerface
• Direct measurement of key exciton properties: energy, dynamics and spatial distribution of the wave function
• Hyperspectral imaging of excitons within a moiré unit-cell with a sub-nanometer electron probe
• Nanoscale trapping of interlayer excitons in a 2D semiconductor heterostructure
• Moiré-Bose-Hubbard model for interlayer excitons in twisted transition metal dichalcogenide heterostructures
• Extended Bose-Hubbard model with dipolar excitons
• Quadrupolar Excitons and Hybridized Interlayer Mott Insulator in a Trilayer Moiré Superlattice
• Localized interlayer complexes in heterobilayer transition metal dichalcogenides
• Quantum phase transitions of tri-layer excitons in atomically thin heterostructures
• Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer
• Exciton spectrum in atomically thin monolayers: The role of hBN encapsulation
• Phonons of electronic crystals in two-dimensional semiconductor moiré patterns
• Melting of electronic and excitonic crystals in 2D semiconductor moiré patterns: a perspective from the Lindemann criterion

Cited by in corpus (4)

• Twistronics and moiré superlattice physics in 2D transition metal dichalcogenides
• Chiral phonons of honeycomb-type bilayer Wigner crystals
• Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential
• Interlayer couplings in homobilayer structures of MSi2X4 (M = Mo/W, X = N/P/As)