Single exciton trapping in an electrostatically defined 2D semiconductor quantum dot

Abstract

Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blue-shift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We attribute these jumps to quantized increases of the number occupancy of IXs within the trap and compare to a theoretical model to assign the lowest energy emission line to single IX recombination.

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Cited by in corpus (4)

• Lattice reconstruction in MoSe${}_2$-WSe${}_2$ heterobilayers synthesized by chemical vapor deposition
• Long-range spatial extension of exciton states in van der Waals heterostructure
• Crystallizing electrons with artificially patterned lattices
• Amplification of valley polarization in an hBN-separated MoSe2-WSe2 heterostructure