Temperature-dependent nonlinear phonon shifts in a supported MoS2 monolayer

Abstract

We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence. Temperature dependence of phonon shifts and widths is explained by optical phonon decay process into two acoustic phonons. On the basis of Raman measurements, local temperature change under laser heating power at different global temperatures is derived. Obtained results contribute to our understanding of the thermal properties of two-dimensional atomic crystals and can help to solve the problem of heat dissipation, which is crucial for use in the next generation of nanoelectronic devices.

ACS Appl. Mater. Interfaces (2014)

References in corpus (5)

• Two Dimensional Atomic Crystals
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Room-Temperature Quantum Hall Effect in Graphene
• Integrated Circuits Based on Bilayer MoS2 Transistors

Cited by in corpus (2)

• Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
• Electron-phonon and phonon-phonon anharmonic interactions in 2H-MoX2 (X=S, Te): A comprehensive Resonant Raman study