Response to comment "Measurement of mobility in dual-gated MoS2 transistors"

Abstract

In our previous paper, we reported on switchable monolayer MoS2 transistors with a high on-off ratio and we claim that dielectric screening can be used to increase the mobility of monolayer MoS2. We estimated its mobility using a method previously applied by Lemme et al. to top-gated graphene nanoribbons. We discuss here the comments raised by M. Fuhrer and J. Hone in their post 1301.4288 and give our own estimates of the possible errors in previous mobility measurements and their origins.

Submitted

References in corpus (3)

• Two Dimensional Atomic Crystals
• A Graphene Field-Effect Device
• Measurement of mobility in dual-gated MoS2 transistors

Cited by in corpus (17)

• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Phosphorene nanoribbons, nanotubes and van der Waals multilayers
• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Intrinsic Electrical Transport Properties of Monolayer Silicene and MoS2 from First Principles
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• Chemically-exfoliated single-layer MoS${}_2$ : stability, lattice dynamics and catalytic adsorption from first principles
• Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics
• A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility
• Hall and field-effect mobilities in few layered $p$-WSe${}_2$ field-effect transistors
• Temperature-dependent nonlinear phonon shifts in a supported MoS2 monolayer
• Hot-electron cooling by acoustic and optical phonons in monolayers of MoS${}_2$ and other transition-metal dichalcogenides
• van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
• Monolayer 2D semiconducting tellurides for high-mobility electronics
• Combined electrical transport and capacitance spectroscopy of a $\mathrm{Mo}{\mathrm{S}}_2-\mathrm{LiNb}{\mathrm{O}}_3$ field effect transistor
• Phosphorene: Fabrication, Properties and Applications