Infrared study of the pressure-induced isostructural metallic transition in Mo$_{0:5}$W$_{0:5}$S$_{2}$

Elena Stellino; Francesca Ripanti; Giacomo Nisini; Francesco Capitani; Caterina Petrillo; Paolo Postorino

doi:10.1021/acs.jpcc.1c02315

paper

Infrared study of the pressure-induced isostructural metallic transition in Mo $_{0 : 5}$ W $_{0 : 5}$ S $_{2}$

arXiv:2103.09517 · doi:10.1021/acs.jpcc.1c02315

Abstract

Ternary compounds of Transition Metal Dichalcogenides are emerging as an interesting class of crystals with tunable electronic properties, which make them attractive for nano-electronic and optoelectronic applications. Among them, Mo $_{x}$ W $_{1 - x}$ S $_{2}$ is one of the most studied alloys, due to the well-known, remarkable features of its binary constituents, MoS $_{2}$ and WS $_{2}$ . The band-gap of this compound can be modelled varying Mo and W percentages in the sample, and its vibrational modes result from a combination of MoS $_{2}$ and WS $_{2}$ phonons. In this work, we report transmission measurements on a Mo $_{0 : 5}$ W $_{0 : 5}$ S $_{2}$ single crystal in the far-infrared range. Absorbance spectra collected at ambient conditions enabled, for the first time, a classification of the infrared-active phonons, complementary to Raman studies. High-pressure measurements allowed to study the evolution of both the lattice dynamics and the free carrier density up to 31 GPa, indicating the occurrence of an isostructural semiconductor-to-metal transition above 18 GPa.

15 pages, 4 figures

Infrared study of the pressure-induced isostructural metallic transition in Mo0:5​W0:5​S2​

Abstract

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Infrared study of the pressure-induced isostructural metallic transition in Mo $_{0 : 5}$ W $_{0 : 5}$ S $_{2}$