High responsivity phototransistors based on few-layer ReS2 for weak signal detection

Abstract

Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high responsivity and weak signal detection are required. Here, we present high responsivity phototransistors based on few-layer rhenium disulfide (ReS2). Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is a record value compared to other two-dimensional materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications.

Accepted by Advanced Functional Materials; 25 pages, 4 figures, 2 supplementary figures

References in corpus (9)

• Boron nitride substrates for high-quality graphene electronics
• Graphene photodetectors for high-speed optical communications
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Photocurrent generation with two-dimensional van der Waals semiconductors
• Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
• Mechanisms of photoconductivity in atomically thin MoS2
• Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
• Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors
• Mobility enhancement and temperature dependence in top-gated single-layer MoS2

Cited by in corpus (18)

• Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
• Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure
• Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides
• Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
• Complete determination of crystallographic orientation of ReX2 (X=S, Se) by polarized Raman spectroscopy
• Pressure dependence of direct optical transitions in ReS2 and ReSe2
• Cleavage Tendency of Anisotropic Two Dimensional Materials: ReX2 (X=S, Se) and WTe2
• Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy
• Photodetecting and Light-Emitting Devices Based on Two Dimensional Materials
• Electrically tunable second harmonic generation in atomically thin ReS2
• Ultrahigh-sensitivity optical power monitor for Si photonic circuits
• Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
• Two-dimensional ReS2: Solution to the Unresolved Queries on Its Structure and Inter-layer Coupling Leading to Potential Optical Applications
• Doping controlled Fano resonance in bilayer 1T${}^{\prime }$-ReS${}_2$: Raman experiments and first-principles theoretical analysis
• Highly sensitive photodetector based on two-dimensional ferroelectric semiconducting \{beta}-InSe/graphene heterostructure
• Electroluminescence from indirect band gap semiconductor ReS${}_2$
• Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor
• Unraveling the Photophysics of Liquid-Phase Exfoliated Two-Dimensional ReS2 Nanoflakes