Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides

Abstract

Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility to environmental conditions. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2, where the hetero-junctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layer. With respect to their monolayer counterparts, bilayer lateral heterostructures yield nearly one order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ~103 times larger than those extracted from the monolayers, in addition to room-temperature electroluminescence. The superior performance of bilayer heterostructures significantly expands the functionalities of 2D crystals.

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• Atomically thin p-n junctions with van der Waals heterointerfaces
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• Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
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• Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
• Electrical Tuning of Valley Magnetic Moment via Symmetry Control
• Sequential Edge-Epitaxy in 2D Lateral Heterostructures
• Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2
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• High responsivity phototransistors based on few-layer ReS2 for weak signal detection
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• Pronounced photovoltaic response from multi-layered transition-metal dichalcogenides PN-junctions
• Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure

Cited by in corpus (12)

• Spin-valley system in a gated MoS${}_2$-monolayer quantum dot
• The 2D pn Junction Driven Out-of-Equilibrium
• Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
• Exploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs
• High-pressure high-temperature solution growth, structural, and superconducting properties of Fe-substituted MgB2 single crystals
• Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures
• High-pressure self-flux growth and characterization of Li-deficient Li0.95FeAs single crystals
• Long-term Stability of Bilayer MoS2 in Ambient Air
• The emergence of interface states in graphene/transition metal dichalcogenides heterostructure with lateral interface
• Discovery of a new magnesium iron boride Mg4Fe1.1B13.9 in the Mg-Fe-B-N system
• Thermal stability of monolayer $W{S}_2$ in BEOL conditions
• Spatially Resolved Persistent Photoconductivity in MoS${}_2$-WS${}_2$ Lateral Heterostructures