High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures

Abstract

We report experimental measurements for ultrathin (< 15 nm) van der Waals heterostructures exhibiting external quantum efficiencies exceeding 50%, and show that these structures can achieve experimental absorbance > 90%. By coupling electromagnetic simulations and experimental measurements, we show that pn WSe2/MoS2 heterojunctions with vertical carrier collection can have internal photocarrier collection efficiencies exceeding 70%.

arXiv commentACS Nano, 2017. Manuscript (25 pages, 7 figures) plus supporting information (7 pages, 4 figures)

References in corpus (14)

• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
• Solar-energy conversion and light emission in an atomic monolayer p-n diode
• Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
• Photovoltaic effect in an electrically tunable van der Waals heterojunction
• Plasmonic Films Can Easily Be Better: Rules and Recipes
• Intense Internal and External Fluorescence as Solar Cells Approach the Shockley-Queisser Efficiency Limit
• Channel Length Scaling of MoS2 MOSFETs
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Low Frequency Electronic Noise in Single-Layer MoS2 Transistors
• Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics
• Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy

Cited by in corpus (19)

• Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
• Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
• Atomically thin p-n junctions based on two-dimensional materials
• Near-direct bandgap $WS{e}_2$/$Re{S}_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics
• Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
• Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides
• Device physics of van der Waals heterojunction solar cells
• Exciton-Photonics: From Fundamental Science to Applications
• Theory and Ab Initio Computation of the Anisotropic Light Emission in Monolayer Transition Metal Dichalcogenides
• High open-circuit voltage in transition metal dichalcogenide solar cells
• Tunneling-current-induced local excitonic luminescence in p-doped WSe${}_2$ monolayers
• Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals
• Dimensionality and Anisotropicity Dependence of Radiative Recombination in Nanostructured Phosphorene
• Sub-ps thermionic electron injection effects on exciton-formation dynamics at a van der Waals semiconductor/metal interface
• Raman scattering from the bulk inactive out-of-plane B${}_{2\text{g}}^1$ mode in few-layer MoTe${}_2$
• Spatiotemporal Imaging of Thickness-Induced Band Bending Junctions
• Light-matter interactions in layered materials and heterostructures: from moiré physics and magneto-optical effects to ultrafast dynamics and hybrid meta-photonics
• Impact of $A{l}_2{O}_3$ Passivation on the Photovoltaic Performance of Vertical $WS{e}_2$ Schottky Junction Solar Cells
• Optical microscope based universal parameter for identifying layer number in two-dimensional materials