Low Frequency Electronic Noise in Single-Layer MoS2 Transistors

Abstract

Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (< 10-5 Torr). The field-effect mobility decreased and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 K to 6.5 K.

Nano Letters (2013)

References in corpus (7)

• Integrated Circuits Based on Bilayer MoS2 Transistors
• Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy
• Hooge's Constant of Carbon Nanotube Field Effect Transistors
• Percolative Effects on Noise in Pentacene Transistors
• Facile fabrication of suspended as-grown carbon nanotube devices

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