Facile fabrication of suspended as-grown carbon nanotube devices

Abstract

A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2).

arXiv comment15 pages, 4 figures

References in corpus (7)

• Carbon Nanotubes as Schottky Barrier Transistors
• Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors
• Measuring electron orbital magnetic moments in carbon nanotubes
• Electron Transport in Very Clean, As-Grown Suspended Carbon Nanotubes
• Nanotransfer Printing of Organic and Carbon Nanotube Thin-Film Transistors on Plastic Substrates
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• Optimizing Transistor Performance of Percolating Carbon Nanotube Networks
• Controlled Growth, Patterning and Placement of Carbon Nanotube Thin Films
• Extrinsic and Intrinsic Photoresponse in Monodisperse Carbon Nanotube Thin Film Transistors
• Transfer Printing Approach to All-Carbon Nanoelectronics