Percolative Effects on Noise in Pentacene Transistors
arXiv:0710.2700 · doi:10.1063/1.2823577
Abstract
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies as (gate voltage)-1, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.
13 pages, 4 figures, Published
References in corpus (1)
Cited by in corpus (5)
- Low Frequency Electronic Noise in Single-Layer MoS2 Transistors
- Effect of impurities on pentacene island nucleation
- Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors
- Conductivity noise study of the insulator-metal transition and phase co-existence in epitaxial samarium nickelate thin films
- Pentacene islands grown on ultra-thin SiO2