most citedPercolative Effects on Noise in Pentacene Transistors

38 citations · 113 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2008★ 12 cited

Pentacene islands grown on ultra-thin SiO2

B. R. Conrad, W. G. Cullen, B. C. Riddick +1

Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then…

cond-mat.stat-mech2008★ 6 cited

Spatial First-passage Statistics of Al/Si(111)-(root3 x root3) Step Fluctuations

B. R. Conrad, W. G. Cullen, D. B. Dougherty +2

Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, fo…

cond-mat.mtrl-sci2008★ 28 cited

Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors

Elba Gomar-Nadal, Brad R. Conrad, William G. Cullen +1

Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content…

cond-mat.mtrl-sci2008★ 29 cited

Effect of impurities on pentacene island nucleation

B. R. Conrad, Elba Gomar-Nadal, W. G. Cullen +3

Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material in a controlled manner to quantify the relative effects of the impurity content on grain bou…

cond-mat.mtrl-sci2007★ 38 cited

Percolative Effects on Noise in Pentacene Transistors

B. R. Conrad, W. G. Cullen, W. Yan +1

The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducti…