The Buckling of Single-Layer MoS2 Under Uniaxial Compression

Abstract

Molecular dynamics simulations are performed to investigate the buckling of single-layer MoS2 under uniaxial compression. The strain rate is found to play an important role on the critical buckling strain, where higher strain rate leads to larger critical strain. The critical strain is almost temperature-independent for T<50 K, and it increases with increasing temperature for T>50 K owning to the thermal vibration assisted healing mechanism on the buckling deformation. The length-dependence of the critical strain from our simulations is in good agreement with the prediction of the Euler buckling theory.

Nanotechnology, accepted

References in corpus (5)

• The electronic properties of graphene
• Elastic properties of freely suspended MoS2 nanosheets
• All-graphene integrated circuits via strain engineering
• Compression Behavior of Single-layer Graphene
• Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

Cited by in corpus (5)

• Graphene Versus MoS2: a Short Review
• Rippling, buckling and melting of single- and multi-layer MoS${}_2$
• Graphene Ripples as a Realization of a Two-Dimensional Ising Model: A Scanning Tunneling Microscope Study
• Thermal buckling and symmetry breaking in thin ribbons under compression
• A Fast Uniaxial Compression of the Single-Layer MoS2