Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2

Abstract

We report a determination of the complex in-plane dielectric function of monolayers of four transition metal dichalcogenides: MoS2, MoSe2, WS2 and WSe2, for photon energies from 1.5 - 3 eV. The results were obtained from reflection spectra using a Kramers-Kronig constrained variational analysis. From the dielectric functions, we obtain the absolute absorbance of the monolayers. We also provide a comparison of the dielectric function for the monolayers with the corresponding bulk materials.

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• Valley polarization in MoS2 monolayers by optical pumping
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
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• Probing Excitonic Dark States in Single-layer Tungsten Disulfide
• Non-linear Optical Spectroscopy of Excited Exciton States for Efficient Valley Coherence Generation in WSe2 Monolayers
• Mono- and Bilayer WS2 Light-Emitting Transistors
• Light Generation and Harvesting in a Van der Waals Heterostructure
• Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

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