2.6k citations · 4.6k across the 45 of their papers we have counts for
45 papers
Nonlocal Transport in Cr-doped (Bi,Sb)2Te3: Absence of Nonchiral Edge States
Valery Ortiz Jimenez, Paul M. Haney, Farzad Mahfouzi +3
The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically…
From Wye-Delta to Cross-Square Recursion Configurations in Graphene-Based Quantum Hall Arrays
Ngoc Thanh Mai Tran, Marta Musso, Dominick S. Scaletta +8
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor ν = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The…
Influences of the Minkowski-Bouligand Dimension on Graphene-Based Quantum Hall Array Designs
Dominick S. Scaletta, Ngoc Thanh Mai Tran, Marta Musso +7
This work elaborates on how one may develop high-resistance quantized Hall array resistance standards (QHARS) by using star-mesh transformations for element count minimization. Ref…
Implementing Pseudofractal Designs in Graphene-Based Quantum Hall Arrays using Minkowski-Bouligand Algorithms
Dominick S. Scaletta, Ngoc Thanh Mai Tran, Marta Musso +5
This work introduces a pseudofractal analysis for optimizing high-resistance graphene-based quantized Hall array resistance standards (QHARS). The development of resistance standar…
Auxiliary Calculations for Graphene-Based Quantum Hall Arrays Using Partially Recursive Star-Mesh Transformations
Dominick S. Scaletta, Albert F. Rigosi
A previous mathematical approach adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Ha…
Constructing 100 MΩ and 1 GΩ Resistance Standards via Star-Mesh Transformations
Dean G. Jarrett, Albert F. Rigosi, Dominick S. Scaletta +7
A recent mathematical framework for optimizing resistor networks to achieve values in the MΩ through GΩ levels was employed for two specific cases. Objectives here include proof of…
Fractal-like star-mesh transformations using graphene quantum Hall arrays
Dominick S. Scaletta, Swapnil M. Mhatre, Ngoc Thanh Mai Tran +10
A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall arr…
A unified realization of electrical quantities from the quantum International System of Units
Linsey K. Rodenbach, Jason M. Underwood, Ngoc Thanh Mai Tran +12
In the revised International System of Units (SI), the ohm and the volt are realized from the von Klitzing constant and the Josephson constant, and a practical realization of the a…
Variable Electrical Responses in Epitaxial Graphene Nanoribbons
C. -C. Yeh, S. M. Mhatre, N. T. M. Tran +7
We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H-SiC using a polymer-assisted sublimation growth method. The pheno…
Star-Mesh Quantized Hall Array Resistance Devices
Dean G. Jarrett, Ching-Chen Yeh, Shamith U. Payagala +10
Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-b…
Quantum Entropic Effects in the Liquid Viscosities of Hydrogen, Deuterium, and Neon
Ian Bell, Jacob W. Leachman, Albert F. Rigosi +1
The extremely low temperatures have limited the availability and accuracy of experimental thermophysical property measurements for cryogens, particularly transport properties. Trad…
Optical Signatures of Strain Differences in Epitaxial Graphene Nanoribbons
Heather M. Hill, Ching-Chen Yeh, Swapnil M. Mhatre +6
We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the pr…
Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs
Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill +7
In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material g…
Diffraction Patterns of Apertures Shaped as National Borders
Albert F. Rigosi
How aesthetically pleasing is your country's diffraction pattern? This work summarizes the calculated and experimental Fraunhofer diffraction patterns obtained from using apertures…
Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene
Ngoc Thanh Mai Tran, Swapnil M. Mhatre, Cristiane N. Santos +10
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes…
Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices
Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill +6
This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption…
Large-scale five- and seven-junction epitaxial graphene devices
Dinesh Patel, Martina Marzano, Chieh-I Liu +8
The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized…
Algorithms for determining resistances in quantum Hall annuli with p-n junctions
Chieh-I Liu, Dominick S. Scaletta, Dinesh K. Patel +4
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic…
Fabrication of quantum Hall p-n junction checkerboards
Dinesh K. Patel, Martina Marzano, Chieh-I Liu +4
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetr…
Expansion of Graphene-Based Device Technology for Resistance Metrology
Albert F. Rigosi
The field of Quantum Hall metrology had a strong start with the implemntation of GaAs-based devices, given that 2D materials systems provided access to interesting quantum phenomen…
Marking the Graphene Era in Disseminating the Redefined SI
Albert F. Rigosi
The history of quantum Hall standards stretches several decades and mostly begins with the use of GaAs given that 2D electron systems exhibit interesting quantum phenomena. At the…
Historical Context and Outlook of Quantum Hall Research for the Redefined SI
Albert F. Rigosi
To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phe…
Quantum Hall Junction Dartboards Using Graphene Annuli
Chieh-I Liu, Dinesh K. Patel, Martina Marzano +3
The use of multiple current terminals on millimeter-scale graphene junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled th…
Nonconventional Quantized Hall Resistances Obtained with Equilibration in Epitaxial Graphene Junctions
Albert F. Rigosi, Dinesh Patel, Martina Marzano +9
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene junction devices using simple ultraviolet photolithography, thereby significantly reduci…