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Nonlocal Transport in Cr-doped (Bi,Sb)2Te3: Absence of Nonchiral Edge States
Valery Ortiz Jimenez, Paul M. Haney, Farzad Mahfouzi +3
The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically…
From Wye-Delta to Cross-Square Recursion Configurations in Graphene-Based Quantum Hall Arrays
Ngoc Thanh Mai Tran, Marta Musso, Dominick S. Scaletta +8
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor ν = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The…
Influences of the Minkowski-Bouligand Dimension on Graphene-Based Quantum Hall Array Designs
Dominick S. Scaletta, Ngoc Thanh Mai Tran, Marta Musso +7
This work elaborates on how one may develop high-resistance quantized Hall array resistance standards (QHARS) by using star-mesh transformations for element count minimization. Ref…
Implementing Pseudofractal Designs in Graphene-Based Quantum Hall Arrays using Minkowski-Bouligand Algorithms
Dominick S. Scaletta, Ngoc Thanh Mai Tran, Marta Musso +5
This work introduces a pseudofractal analysis for optimizing high-resistance graphene-based quantized Hall array resistance standards (QHARS). The development of resistance standar…
Auxiliary Calculations for Graphene-Based Quantum Hall Arrays Using Partially Recursive Star-Mesh Transformations
Dominick S. Scaletta, Albert F. Rigosi
A previous mathematical approach adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Ha…
Constructing 100 MΩ and 1 GΩ Resistance Standards via Star-Mesh Transformations
Dean G. Jarrett, Albert F. Rigosi, Dominick S. Scaletta +7
A recent mathematical framework for optimizing resistor networks to achieve values in the MΩ through GΩ levels was employed for two specific cases. Objectives here include proof of…