Thermal Conductivities and Interfacial Thermal Conductance of 1- to 3-Layer WSe
arXiv:2011.00730
Abstract
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we used the opto thermal Raman technique to measure the thermal transport properties of a popular TMDC material WSe, in single atomic layer, bilayer, and trilayer forms.
References in corpus (11)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Van der Waals heterostructures
- High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
- High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion
- Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor
- Generation and Electric Control of Spin-Coupled Valley Current in WSe2
- Layer and size dependence of thermal conductivity in multilayer graphene nanoribbons