Tunneling Field-Effect Junctions with WS${}_2$ barrier

Abstract

Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of graphene and insulating crystals of a few atomic layers in thickness. We report first-principles study of the electronic properties of the Graphene/WS${}_2$/Graphene sandwich structure revealing strong interface effects on dielectric properties and predicting a high ON/OFF ratio with an appropriate WS${}_2$ thickness and a suitable range of the gate voltage. Both the band spin-orbit coupling splitting and the dielectric constant of the WS${}_2$ layer depend on its thickness when in contact with the graphene electrodes, indicating strong influence from graphene across the interfaces. The dielectric constant is significantly reduced from the bulk WS${}_2$ value. The effective barrier height varies with WS${}_2$ thickness and can be tuned by a gate voltage. These results are critical for future nanoelectronic device designs.

arXiv comment18 pages, 5 figures

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