activity
20152022
most citedSynthesis and properties of free-standing monolayer amorphous carbon

464 citations · 468 across the 4 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2022

First-Principles investigation of the First-order Phase Transition in Kagome NaTiCl

Shuang Liu, Zhi-Bo Yin, Meng-Qiu Long +1

The antiferromagnetic kagome material Na2Ti3Cl8 exhibits a first-order phase transition; the low-temperature phase is characterized by the trimerizations of Ti ions. In this work,…

astro-ph.GA20224 cited

Optical Properties of Crich (C, SiC and FeC) Dust Layered Structure of Massive Stars

Ruiqing Wu, Mengqiu Long, Xiaojiao Zhang +9

The composition and structure of interstellar dust are important and complex for the study of the evolution of stars and the \textbf{interstellar medium} (ISM). However, there is a…

cond-mat.mtrl-sci2021464 cited

Synthesis and properties of free-standing monolayer amorphous carbon

Chee-Tat Toh, Hongji Zhang, Junhao Lin +12

Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zacharias…

cond-mat.mtrl-sci2019

Gate field effects on the topological insulator BiSbTeSe2 interface

Shuanglong Liu, Yang Xu, Yun-Peng Wang +3

Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two…

cond-mat.mes-hall2017

Multi-Control Over Graphene-Molecule Hetereo-Junctions

Yun-Peng Wang, J. N. Fry, Hai-Ping Cheng

The vertical configuration is a powerful tool recently developed experimentally to investigate field effects in quasi 2D systems. Prototype graphene-based vertical tunneling transi…

cond-mat.mtrl-sci2017

Tunneling Field-Effect Junctions with WS barrier

Xiang-Guo Li, Yun-Peng Wang, X. -G. Zhang +1

Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor…