Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material
arXiv:2301.05644 · doi:10.1021/acs.nanolett.3c01127
Abstract
High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenide (TMD) make it an ideal candidate for optoelectronic applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe2-to-MoS2 with an interlayer hBN, due to the resonant overlapping of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron-phonon scattering, destroying the enhanced MoS2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.
arXiv comment5 figures and SI included
References in corpus (30)
- Atomically thin MoS2: A new direct-gap semiconductor
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Observation of tightly bound trions in monolayer MoS2
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
- Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
- Photocarrier relaxation in two-dimensional semiconductors
- Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
- Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides
- Significant reduction of lattice thermal conductivity by electron-phonon interaction in silicon with high carrier concentrations: a first-principles study
- Exciton fine structure and spin decoherence in monolayers of transition metal dichalcogenides
- Directly visualizing the momentum forbidden dark excitons and their dynamics in atomically thin semiconductors
- Revealing the Biexciton and Trion-exciton Complexes in BN Encapsulated WSe2
- Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures
- Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
- Atomically thin mirrors made of monolayer semiconductors
- Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles
- Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics
- Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films
- Measurement of the Spin-Forbidden Dark Excitons in MoS2 and MoSe2 monolayers
- Light matter interaction in transition metal dichalcogenides and their heterostructures
- Distance Dependence of the Energy Transfer Rate From a Single Semiconductor Nanostructure to Graphene
- Charge versus energy transfer in atomically-thin graphene-transition metal dichalcogenide van der Waals heterostructures
- Probing and manipulating valley coherence of dark excitons in monolayer WSe
- Direct determination of momentum resolved electron transfer in the photo-excited MoS2/WS2 van der Waals heterobilayer by TR-ARPES
- Picosecond energy transfer in a transition metal dichalcogenide-graphene heterostructure revealed by transient Raman spectroscopy
- Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure
- Tuning carrier concentration in a superacid treated MoS monolayer