Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures

Abstract

Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transition metal dichalcogenides (TMDs) found that the exciton decay dynamics is dominated by interlayer charge transfer (CT) processes. Here, we report an experimental observation of fast interlayer energy transfer (ET) in MoSe2/WS2 heterostructures using photoluminescence excitation (PLE) spectroscopy. The temperature dependence of the transfer rates suggests that the ET is Förster-type involving excitons in the WS2 layer resonantly exciting higher-order excitons in the MoSe2 layer. The estimated ET time of the order of 1 ps is among the fastest compared to those reported for other nanostructure hybrid systems such as carbon nanotube bundles. Efficient ET in these systems offers prospects for optical amplification and energy harvesting through intelligent layer engineering.

Main text: 14 pages, 5 figures, Supplementary Information: 18 pages, 12 figures, 1 table, Nano Letters (2016)

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• Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
• Distinctive signatures of the spin- and momentum-forbidden dark exciton states in the photo-luminescences of strained WSe${}_2$ monolayers under thermalization
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• Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
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• Twisted MoSe2 Homobilayer Behaving as a Heterobilayer
• Spectrally tunable, large Raman enhancement from nonradiative energy transfer in van der Waals heterostructure
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• Exciton-Sensitized Second-Harmonic Generation in 2D Heterostructures
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