Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2
arXiv:1903.06899
Abstract
Manipulating and reserving the valley pseudospin of excitons is one core aim in the two-dimensional transition metal dichalcogenides (TMDs). However, due to the strong electron-hole exchange and spin-orbit coupling interactions, the exciton recombination lifetime is subject to picosecond timescale intrinsically, and the valley polarization is hardly modulated by a moderate magnetic field. It is fortunate that interlayer and defect-localized excitons promise to overcome these difficulties by suppressing the above interactions. Here we clearly reveal that the valley polarization can be reversed and revived in the defect-localized excitons with a microsecond lifetime in AB-stacked WSe2-WS2 heterobilayer. Specifically, for the interlayer defect-localized exciton, the valley polarization is reversed and can be efficiently enhanced by a weak out-of-plane magnetic field (<0.4 T). In sharp contrast, the valley polarization of the intralayer defect-localized exciton can revive after a fast decay process and follows the direction of the moderate out-of-plane magnetic field (<3 T). We explain the reversed valley polarization with highly magnetic sensitivity by the delocalization of defect-localized holes under a weak magnetic field and the revival of valley polarization by the valley Zeeman effect under a moderate magnetic field. Our results demonstrate that the valley pseudospin of defect-localized excitons can be efficiently modulated by the external magnetic field and enrich both the understanding and the technical approaches on manipulating the valley dynamics in TMDs and their heterostructure.
arXiv comment17 pages, 5 figures
References in corpus (18)
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Valley polarization in MoS2 monolayers by optical pumping
- Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures
- Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Signatures of moiré-trapped valley excitons in MoSe/WSe heterobilayers
- Magnetic Control of Valley Pseudospin in Monolayer WSe2
- Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
- Magnetic brightening and control of dark excitons in monolayer WSe2
- Generation and Electric Control of Spin-Coupled Valley Current in WSe2
- Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2
- Valley depolarization due to inter- and intra-valley electron-hole exchange interactions in monolayer MoS
- Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures
- Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers
- Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure
- Valley Magnetoelectricity in Single-Layer MoS2
- Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
- Microsecond dark-exciton valley polarization memory in 2D heterostructures