Very High Interfacial Thermal Conductance in Fully hBN-Encapsulated MoS2 van der Waals Heterostructure
arXiv:2102.05239
Abstract
We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high interfacial thermal conductance between hBN and MoS2. By studying the Raman shift of hBN and MoS2 in suspended and substrate-supported thin films under varying laser power and temperature, we calibrate lateral (in-plane) thermal conductivity of hBN and MoS2 and the vertical interfacial thermal conductance in the hBN/MoS2/hBN heterostructure as well as the interfaces between heterostructure and substrate. Crucially, we have found that interfacial thermal conductance between hBN and encapsulated MoS2 is 74MW/m2K and 72MW/m2K in supported and suspended films, respectively, which are significantly higher than interfacial thermal conductance between MoS2 and other substrates. Molecular dynamics (MD) computations conducted in parallel have shown consistent results. This work provides clear evidence of significantly efficient heat dissipation in hBN/MoS2/hBN heterostructures and sheds light on building novel hBN encapsulated nanoelectronics with efficient thermal management.
References in corpus (14)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Atomically thin MoS2: A new direct-gap semiconductor
- Boron nitride substrates for high-quality graphene electronics
- Ultrafast graphene photodetector
- Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
- Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride
- High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion
- Interatomic Potential for Silicon Defects and Disordered Phases
- Molecular Dynamics Simulations of Single-Layer Molybdenum Disulphide (MoS2): Stillinger-Weber Parametrization, Mechanical Properties, and Thermal Conductivity
- Generation and Electric Control of Spin-Coupled Valley Current in WSe2
- Bright visible light emission from graphene
- Energy Dissipation in Monolayer MoS Electronics
- Effects of Hexagonal Boron Nitride Encapsulation on the Electronic Structure of Few-layer MoS