activity
20152021
most citedBlack Phosphorus Nanoelectromechanical Resonators Vibrating at Very High Frequencies

139 citations · 336 across the 8 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci202123 cited

Young's Modulus and Corresponding Orientation in β-Ga2O3 Thin Films Resolved by Nanomechanical Resonators

Xu-Qian Zheng, Hongping Zhao, Zhitai Jia +2

We report on the non-destructive measurement of Young's modulus of thin-film single crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanical structures by measuring…

cond-mat.mes-hall202147 cited

Ultrawide Frequency Tuning of Atomic Layer van der Waals Heterostructure Electromechanical Resonators

Fan Ye, Arnob Islam, Teng Zhang +1

We report on the experimental demonstration of atomically thin molybdenum disulfide (MoS2)-graphene van der Waals (vdW) heterostructure nanoelectromechanical resonators with ultraw…

physics.optics202116 cited

Cavity Quantum Electrodynamics Design with Single Photon Emitters in Hexagonal Boron Nitride

Yanan Wang, Jaesung Lee, Jesse Berezovsky +1

Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoe…

cond-mat.mes-hall20214 cited

Very High Interfacial Thermal Conductance in Fully hBN-Encapsulated MoS2 van der Waals Heterostructure

Fan Ye, Qingchang Liu, Baoxing Xu +2

We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined o…

cond-mat.mes-hall202051 cited

Hexagonal Boron Nitride Phononic Crystal Waveguides

Yanan Wang, Jaesung Lee, Xu-Qian Zheng +2

Hexagonal boron nitride (h-BN), one of the hallmark van der Waals (vdW) layered crystals with an ensemble of attractive physical properties, is playing increasingly important roles…

physics.app-ph2018

Ultrawide Band Gap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion

Xu-Qian Zheng, Jaesung Lee, Subrina Rafique +4

Beta gallium oxide (β-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors fo…