Transition metal dichalcogenide dimer nano-antennas with ultra-small gaps
arXiv:2105.09201 · doi:10.1021/acsnano.2c00802
Abstract
Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structure. Using dark field spectroscopy, we reveal multiple Mie resonances, to which we couple WSe monolayer photoluminescence and achieve Purcell enhancement and an increased fluorescence by factors up to 240. We introduce post-fabrication atomic force microscope repositioning and rotation of dimer nano-antennas, achieving gaps as small as 105 nm, opening the possibility to a host of potential applications including strong Purcell enhancement of single photon emitters and optical trapping, which we study in simulations. Our findings highlight the advantages of using transition metal dichalcogenides for nano-photonics by exploring new applications enabled by their unique properties.
References in corpus (27)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two-Dimensional Material Nanophotonics
- Excitons in atomically thin transition metal dichalcogenides
- Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
- Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
- Twistable electronics with dynamically rotatable heterostructures
- Visibility of dichalcogenide nanolayers
- Transition metal dichalcogenide nanodisks as high-index dielectric Mie nanoresonators
- Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics
- High Purcell factor generation of coherent on-chip single photons
- Photonic-Crystal Exciton-Polaritons in Monolayer Semiconductors
- Deterministic coupling of site-controlled quantum emitters in monolayer semiconductors to plasmonic nanocavities
- Nonlinear Photoluminescence in Atomically Thin Layered WSe2 Arising from Diffusion-Assisted Exciton-Exciton Annihilation
- Nonlinear polaritons in monolayer semiconductor coupled to optical bound states in the continuum
- Photonic Crystal Cavities from Hexagonal Boron Nitride
- Nanophotonics with 2D Transition Metal Dichalcogenides
- Nonlinear twistoptics at symmetry-broken interfaces
- Control of the Exciton Radiative Lifetime in van der Waals Heterostructures
- Hybrid Exciton-Plasmon-Polaritons in van der Waals Semiconductor Gratings
- Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas
- Transition metal dichalcogenide metamaterials with atomic precision
- Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas
- Valley coherent exciton-polaritons in a monolayer semiconductor
- Radiative enhancement of single quantum emitters in WSe2 monolayers using site-controlled metallic nano-pillars
- All van der Waals Integrated Nanophotonics
- Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors
- Optical polarization based logic functions (XOR or XNOR) with nonlinear Gallium nitride nanoslab
Cited by in corpus (5)
- Van der Waals Materials for Applications in Nanophotonics
- Van der Waals Nanoantennas on Gold as Hosts for Hybrid Mie-Plasmonic Resonances
- Interface second harmonic generation enhancement in hetero-bilayer van der Waals nanoantennas
- Realization of Z topological photonic insulators made from multilayer transition metal dichalcogenides
- Light-matter interactions in layered materials and heterostructures: from moiré physics and magneto-optical effects to ultrafast dynamics and hybrid meta-photonics